Availability:
10 In Stock
Specifications:
- Technology: Si
- Mounting Style: SMD/SMT
- Package/Case: TO-263-7
- Transistor Polarity: N-Channel
- Number of Channels:1 Channel
- Vds - Drain-Source Breakdown Voltage: 30 V
- Id - Continuous Drain Current:180 A
- Rds On - Drain-Source Resistance: 1.05 mOhms
- Vgs - Gate-Source Voltage: - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage: 1.5 V
- Qg - Gate Charge: 187 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Pd - Power Dissipation: 188 W
- Channel Mode:Enhancement
- Qualification: AEC-Q101
- Tradename: OptiMOS
- Series: OptiMOS-T2
- Packaging: Reel
- Height: 4.4 mm
- Length:10 mm
- Product Type: MOSFET
- Rise Time: 5 ns
Package:
1x 4N03L01 IPB180N03S4L-01 TO-263-7 30V 180A SMD Triode