• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

The NPN Transistor 25V 0.2A - BC109 offers reliable performance for various electronic applications. With a collector-emitter voltage of 25V and a transition frequency of 150MHz, it's ideal for general-purpose switching and amplification.

• Programmable Zener diode
• Output voltage range: 2.5V to 36V
• Output current range: 1mA to 100mA (sink current)
• Output voltage tolerance: ±4%

Specifications:

• Vr rm: 400V
• It (rms): 0.8A
• Pgm: 0.1W
• Vgrm: 5V
• Vgt: 0.8V
• Ih: 5mA
• Manufacturer: Motorola
• Model Number: MCR100-6

Package:

• 1x MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor TO-92 Package

• High switching speed
• hFE grouping
• hFE improved linearity
• Collector–Emitter Sustaining Voltage: VCEO(SUS) = 100 Vdc (Min)

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:

• Collector-Emitter Voltage (V_ce): 600V
• Collector-Base Voltage (V_cb): 1500V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 6A
• Power Dissipation (P_tot): 50W
• DC Current Gain (h_FE): 8 to 25
• Transition Frequency (f_t): 2MHz
• Package: TO-3PF

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

The 78L05 5V 100mA Positive Voltage Regulator is designed to provide a stable 5V output for small loads up to 100mA. Ideal for various power management applications, it features:

• 5V Positive Voltage Regulator
• Output Current up to 100mA
• Maximum Input Voltage of 30V
• Operating current (IQ) of 5mA
• Internal Thermal Overload and Short Circuit Protection

The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

• Type: NPN
• Collector-Emitter Voltage: 250V
• Collector-Base Voltage: 250V
• Emitter-Base Voltage: 5V
• Collector Current: 17A
• Collector Dissipation: 130W
• DC Current Gain (hfe): 55 to 160
• Transition Frequency: 30 MHz
• Operating and Storage Temperature Range: -55 to +150°C
• Package: TO-3P

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

2SA1494 Transistors - Bipolar (BJT) - Single

The 2SA1494 is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including audio and general-purpose use. It offers high collector current and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 17A
• Collector Emitter Voltage (V_ceo): 200V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Collector Cutoff Current (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
• Power Dissipation (P_d): 200W
• Transition Frequency (f_t): 20MHz
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: MT-200

The BC547 is a versatile NPN transistor, widely used in electronic circuits for various applications. It features a TO-92 package and is known for its reliability and efficiency. Perfect for both amateur and professional use.

Key Features:

• Pinout Configuration:
  • Collector (C): Current flows in through the collector.
  • Base (B): Controls the biasing of the transistor.
  • Emitter (E): Current drains out through the emitter.
• DC Current Gain (h_FE): Max value of 800
• Continuous Collector Current (I_C): Up to 100mA
• Emitter-Base Voltage (V_BE): 6V
• Base Current (I_B): Max of 5mA

• NPN transistor for medium-frequency applications
• High current gain
• Suitable for amplification in audio and RF circuits
• Low noise operation

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN