• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

The BT136 4A 500V TRIAC is a versatile component designed for efficient power switching applications. With a maximum on-state current of 4A and a repetitive peak off-state voltage of 500V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220B package.

Key Features:

• Product Type: TRIAC SCR
• IC Number: BT136
• Number of Pins: 3
• Package Type: TO-220B

Package contains: 1 x BT136 IC

• High power handling with 80A continuous drain current and 100V drain-to-source voltage.
• Low Rds On (15mΩ @ 40A, 10V) for minimal conduction losses.
• Wide gate drive voltage range with ±20V max Vgs.
• High efficiency due to low gate charge (182 nC @ 10V).

✔ Avalanche Rugged Technology – Ensures high durability and reliability
✔ Rugged Gate Oxide Technology – Provides better gate protection
✔ Lower Input Capacitance – Reduces switching losses for efficiency
✔ Improved Gate Charge – Enhances performance in high-frequency applications

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

• Part NO.: AOTF10N60
• Package: TO-220F
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

Enhance your electronic circuits with the Bangladesh C2073 NPN Power Transistor. This high-performance transistor is perfect for applications requiring reliable and efficient power dissipation and voltage regulation.

• Type Designator: 2SC2073
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation: 25W
• Maximum Collector-Base Voltage: 150V
• Maximum Collector-Emitter Voltage: 150V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1.5A
• Maximum Temperature: 150°C
• Transition Frequency: 1MHz
• Collector Capacitance: 70pF
• Forward Current Transfer Ratio (hFE): Min 40
• Package: TO220

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 25V
• Collector Current (Ic): 0.05A (50mA)
• DC Current Gain (hFE): 65-700 @ 1mA

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

• Floating channel designed for bootstrap operation
• Fully operational up to +600V
• Tolerant to negative transient voltage
• dV/dt immune

• NPN power transistor for high-efficiency performance.
• Suitable for high-speed switching applications.
• Designed for use in audio and power amplification circuits.
• Maximum collector current rating of 1.5 A for handling larger loads.

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The LM336 Voltage Reference Diode is essential for precision voltage regulation in various electronic applications. It ensures stable and reliable performance. Key features include:

• Adjustable voltage reference
• High accuracy and stability
• Low temperature coefficient
• Ideal for analog and digital circuits

• High power dissipation of 186W for efficient operation.
• Wide operating temperature range from -55°C to +150°C.
• Continuous collector current up to 30A for high-performance applications.
• Compact dimensions for space-saving designs.

MJ15024G - Bipolar (BJT) Single Transistor, Audio, NPN

The MJ15024G is a high-performance Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners, and other linear applications. With a high DC current gain and a broad safe operating area, it ensures reliable performance.

• High DC current gain
• High safe operating area
• Collector-base voltage (Vcbo = 400V)
• Emitter-base voltage (Vebo = 5V)