• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

• Capacitance: 220µF
• Voltage: 25V
• Type: SMD (Surface Mount Device)
• Construction: Aluminum Electrolytic

• Current Rating: 3.0A maximum current capacity.
• Wide Operating Temperature: From -40°C to +105°C, ensuring reliable performance in varying environments.
• Low Contact Resistance: 20mΩ Max for efficient conductivity.
• High Insulation Resistance: 1000MΩ Min for improved safety and performance.

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

• 8-Bit Serial-In Parallel-Out Shift Register with D-Type Storage Register.
• Shift Register with Direct Clear for quick data resetting.
• Accurate operation from DC to 20MHz, ensuring high-speed performance.
• 3-State Outputs for flexible bus driving.

• High-quality nickel finish for durability
• 2-channel connectivity for stereo sound systems
• Compact and lightweight design
• Made from sturdy brass material

Header Terminal 7Pin 3.96mm

Ensure your electronic projects have secure and reliable connections with the Header Terminal 7Pin 3.96mm. Designed for robust performance, this header terminal is ideal for various applications, ensuring stable connectivity.

• Pin Count: 7
• Pin Pitch: 3.96mm
• Material: High-quality, durable materials
• Application: Suitable for electronic and electrical connections

• Power Rating: 1/4W for efficient power handling
• Tolerance: ±1% for precision
• Technology: Thick Film, ensuring reliable performance
• Temperature Coefficient: 100ppm/°C, providing

• Ceramic disc type capacitor
• Capacitance of 3.3pF (0.0033nF)
• Reliable and stable performance
• Ideal for high-frequency applications

• 13-Input NAND Gate with TTL logic compatibility.
• Low Power Consumption with LS (Low Power Schottky) technology.
• Fast Switching Time, ensuring high-speed logic operations.
• High Noise Immunity, making it reliable for digital circuits.

• Dual row design with 2x40 pins, totaling 80 holes.
• Breakaway design, can be cut to size with wire cutters for customization.
• Female header configuration for easy connection with male pins.
• Ideal for a variety of electronic and DIY projects.

• Color: Black
• Rating: 2A 125VAC
• Operating Temperature: -25°C to +65°C
• Contact Resistance: ≤ 30MΩ

• 1000V peak repetitive reverse voltage
• 1A maximum average forward rectified current
• 30A non-repetitive peak forward surge current
• Wide operating junction temperature range from −65°C to +175°C

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

Specifications:

• Dynamic resistance: 30mΩ
• I2t value for fusing: 98 A²S
• Maximum peak reverse gate voltage: 5V
• Peak gate current: 4A
• Operating temperature range: -40°C to +125°C
• Storage temperature: -40°C to +150°C

Package:

• 1x TYN612 IC TYN612M Thyristor 12A 600V Unidirectional SCR Thyristor TO-220 Silicon Control Rectifier Transistor

• Type: NPN Bipolar Junction Transistor (BJT)
• Low Noise Figure: Suitable for RF and audio applications
• Compact TO-92 Package: Easy to mount and use in various circuits

• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

• Capacitance: 220µF
• Voltage: 25V
• Type: SMD (Surface Mount Device)
• Construction: Aluminum Electrolytic

• Current Rating: 3.0A maximum current capacity.
• Wide Operating Temperature: From -40°C to +105°C, ensuring reliable performance in varying environments.
• Low Contact Resistance: 20mΩ Max for efficient conductivity.
• High Insulation Resistance: 1000MΩ Min for improved safety and performance.

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

• 8-Bit Serial-In Parallel-Out Shift Register with D-Type Storage Register.
• Shift Register with Direct Clear for quick data resetting.
• Accurate operation from DC to 20MHz, ensuring high-speed performance.
• 3-State Outputs for flexible bus driving.