
- 0.22μF capacitance for high-frequency coupling and filtering.
- 50V rated voltage, suitable for low-to-medium voltage circuits.
- Radial lead design for easy PCB mounting.
- Polyester film dielectric ensures stability and durability.
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1x S21N50 21N50 Power Inverter Transistor 21A 500V
The S21N50 21N50 Power Inverter Transistor is a high-performance N-Channel MOSFET designed for power inverter applications. It offers 500V maximum drain-source voltage, 21A maximum drain current, and features high power dissipation of up to 300W. With low on-state resistance (0.25 Ohm) and fast switching speed (rise time of 33 ns), this transistor is ideal for high-efficiency power conversion. The total gate charge is 160 nC, and it operates with a maximum junction temperature of 150°C. It comes in a durable TO247 package for reliable operation.
What is the maximum power dissipation of the S21N50?
The maximum power dissipation is 300 W.
What is the maximum drain-source voltage of the S21N50?
The maximum drain-source voltage is 500 V.
What is the maximum drain current of the S21N50?
The maximum drain current is 21 A.
What is the rise time of the S21N50?
The rise time is 33 ns.
What is the package type of the S21N50 transistor?
The package type is TO247.