Specifications:
- Type: N-Channel Power MOSFET
- Continuous Drain Current (ID): 35A
- Pulsed Drain Current (ID-peak): 50A
- Drain to Source Breakdown Voltage (VDS): 60V
- Drain Source Resistance (RDS): 0.018 Ohms
- Gate Threshold Voltage (VGS-th): 20V (max)
- Rise Time: 50nS
- Fall Time: 15nS
- Input Capacitance: 1300pF
- Output Capacitance: 300pF
- Package Type: TO-220
Package:
- 1x P55NF06 N-Channel Power MOSFET
Description:
The P55NF06 N-Channel Power MOSFET is an advanced power component designed for efficient performance in high-power and high-frequency circuits. With a continuous drain current of 35A and a low drain-source resistance of 0.018 Ohms, this MOSFET minimizes power loss during operation. Its robust 60V breakdown voltage and fast switching times (50nS rise, 15nS fall) make it ideal for applications requiring quick response and high efficiency. The TO-220 package ensures optimal heat dissipation, enhancing reliability for industrial, automotive, and consumer electronics applications.
FAQ:
-
What is the maximum continuous drain current of this MOSFET?
- The continuous drain current is 35A.
-
What is the maximum drain-to-source breakdown voltage?
- The maximum breakdown voltage is 60V.
-
What applications is this MOSFET suitable for?
- It is suitable for high-power and high-frequency applications such as motor drives, power supplies, and electronic switching.
-
What is the package type?
- The MOSFET comes in a TO-220 package for excellent heat dissipation.
-
What are its switching times?
- The rise time is 50nS, and the fall time is 15nS, ensuring fast switching.
P55NF06 N-Channel Power MOSFET ElectronicsBD Bangladesh (BD)
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