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The IRF630 N-Channel Power MOSFET is a versatile transistor designed for high-efficiency switching and amplification in various electronic circuits. With a maximum drain-to-source voltage of 200V and a continuous drain current rating of 9A, it ensures reliable performance in demanding applications. The low on-state resistance of 0.40Ω minimizes power loss, while the high pulsed drain current capacity of 36A makes it suitable for dynamic load operations.
Encased in a robust TO-220 package, the IRF630 offers efficient heat dissipation and durable performance. Its wide operating temperature range of -55°C to +150°C ensures suitability for extreme environments. This MOSFET is ideal for motor control, power supplies, and other high-power electronic applications.
What is the maximum voltage the IRF630 can handle?
It can handle up to 200V between the drain and source.
What is the continuous and pulsed drain current capacity?
What is the operating temperature range of the IRF630?
The MOSFET operates reliably between -55°C and +150°C.
What is the on-state resistance of this MOSFET?
The on-state resistance (RDS) is 0.40Ω.
What type of applications is the IRF630 suitable for?
It is ideal for high-power applications like motor control, power supplies, and switching circuits.