Specifications:

• Transistors: FETs, MOSFETs
• Series: QFET®
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Vgs (Max): ±30V
• Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
• Power Dissipation (Max): 180W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Base Product Number: FQP34

Package:

• 1x FQP34N20 N-Channel 200 V 31A (Tc) 180W (Tc) Through Hole MOSFET

Description:

The FQP34N20 is an N-Channel MOSFET designed for high-power applications. It handles up to 200 V and 31A, making it ideal for switching and power management tasks in demanding environments.

Frequently Asked Questions (FAQ):

1. What is the maximum voltage rating of this MOSFET?
   The FQP34N20 can handle up to 200 V drain-to-source voltage (Vdss).

2. What type of mounting is supported?
   This MOSFET supports through-hole mounting, making it easy to install in various circuit boards.

3. What is the maximum continuous drain current?
   It supports a continuous drain current of 31A at 25°C.

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