Specifications:
- Pd - Power Dissipation: 186W
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: +150°C
- Series: FGA15N120ANTD
- Packing: Rail
- Continuous Collector Current (Ic Max): 30A
- Height: 19.9mm
- Length: 15.6mm
- Width: 4.8mm
- Gate-Emitter Leakage Current: 250nA
- Product Type: IGBT Transistors
- Subcategory: IGBTs
Package:
- 1x FGA25N120 1200V 25A NPT Trench IGBT Transistor FGA25N120ANTD
Description:
The FGA25N120 1200V 25A NPT Trench IGBT Transistor is designed for industrial and power electronic applications requiring high efficiency and reliability. With a high power dissipation of 186W and a wide operating temperature range of -55°C to +150°C, it ensures robust performance in demanding environments. The compact design of 19.9mm height, 15.6mm length, and 4.8mm width makes it suitable for space-constrained projects. Its continuous collector current of 30A and low gate-emitter leakage current of 250nA make it an excellent choice for efficient power management.
FAQ:
-
What is the maximum power dissipation of this IGBT transistor?
- The maximum power dissipation is 186W.
-
What is the operating temperature range of this transistor?
- The operating temperature ranges from -55°C to +150°C.
-
What is the continuous collector current for this model?
- The continuous collector current is 30A.
-
What are the dimensions of the transistor?
- Height: 19.9mm, Length: 15.6mm, Width: 4.8mm.
-
Is this transistor suitable for industrial applications?
- Yes, it is designed for industrial and power electronic applications.
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