Specifications:
- Drain-to-Source Voltage: 60V
- Gate-to-Source Voltage: ±25V
- Continuous Drain Current: 130 - 210A
- Pulsed Drain Current: TC = 25°C
- Avalanche Current: 40A
- Avalanche Energy: 800mJ
- Maximum Power Dissipation: 110 - 220W
- Junction & Storage Temperature Range: -55~175°C
Package:
- 1 x DG210N06 HA210N06 210N06 TO-247 Original
Description: The DG210N06 HA210N06 210N06 is a high-performance N-Channel MOSFET designed for high current and voltage applications. With a drain-to-source voltage of 60V and continuous drain current of 130-210A, this MOSFET can handle demanding tasks efficiently. The avalanche energy of 800mJ ensures excellent reliability under extreme conditions, while its wide temperature range of -55 to 175°C allows for versatile use in various environments.
FAQ:
-
What is the maximum drain-to-source voltage of this MOSFET?
- The maximum drain-to-source voltage is 60V.
-
What is the continuous drain current rating?
- The continuous drain current rating is between 130 and 210A.
-
What is the avalanche energy rating for this MOSFET?
- The avalanche energy rating is 800mJ.
-
What is the temperature range for this MOSFET?
- The junction and storage temperature range is -55°C to 175°C.
-
What package does the DG210N06 come in?
- The DG210N06 comes in a TO-247 package.
DG210N06 HA210N06 210N06 TO-247 210A 60V N-Channel MOSFET ElectronicsBD Bangladesh (BD)
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What is the latest and best price of DG210N06 HA210N06 210N06 TO-247 210A 60V N-Channel MOSFET in Bangladesh (BD) ?
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