• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

• High Power Output – 68W into 4Ω at ±28V, 38W into 8Ω at ±28V, and 50W into 8Ω at ±35V
• 135W Peak Output Power capability
• High Signal-to-Noise Ratio (≥ 92dB) for clear sound
• Built-in Output Protection from short circuits and voltage spikes

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

• Ultrafast 25 and 50 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage

• Large input voltage range, suitable for various applications.
• No latch-up, ensuring stable operation.
• High gain, providing excellent signal amplification.
• Short-circuit protection, increasing durability.

• High-Precision Oximeter Sensor for heart rate and SpO2 monitoring.
• I2C Interface for easy microcontroller integration.
• Compact & Lightweight design.
• Low Power Consumption, ideal for battery-powered applications.

• 36pF capacitance, ideal for high-frequency applications
• 1206 SMD form factor for compact PCB design
• Multilayer ceramic construction for stability and durability
• Low ESR (Equivalent Series Resistance) for efficient performance

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V

• High-quality cement resistor with excellent durability.
• Ceramic and cement body construction for heat resistance.
• Rated power of 20W suitable for high-power applications.
• 18 OHM resistance with a 5% tolerance for precision.

• High-performance Dual Complementary Pair with Inverter IC
• Wide supply voltage range: 3V to 18V
• Operates across a broad temperature range: -55°C to +125°C
• Compact 14-DIP package with a 0.300" (7.62mm) width

• 51pF capacitance for precision filtering and tuning
• 1206 SMD form factor, ideal for space-constrained designs
• High stability with low ESR for efficient performance
• Reliable in high-frequency applications

• Stable Frequency Output: Provides a precise and consistent 48 MHz clock signal.
• Compact Size: Standard HC-49S package for easy integration into circuit designs.
• Low Frequency Tolerance: Ensures high accuracy with minimal frequency deviation.

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

• Core Architecture: AVR 8-bit
• Max Frequency: 10 MHz
• Data Bus Width: 8 bits
• Memory Size:
  • Flash Memory: 8 kB
  • EEPROM Memory: 64 bytes

Specifications:

• Technology: Si    
• Mounting Style: SMD/SMT    
• Package/Case: TO-263-7    
• Transistor Polarity: N-Channel    
• Number of Channels:1 Channel    
• Vds - Drain-Source Breakdown Voltage: 30 V    
• Id - Continuous Drain Current:180 A    
• Rds On - Drain-Source Resistance: 1.05 mOhms    
• Vgs - Gate-Source Voltage: - 16 V, + 16 V    
• Vgs th - Gate-Source Threshold Voltage: 1.5 V    
• Qg - Gate Charge: 187 nC    
• Minimum Operating Temperature: - 55 C    
• Maximum Operating Temperature: + 175 C    
• Pd - Power Dissipation: 188 W    
• Channel Mode:Enhancement    
• Qualification: AEC-Q101    
• Tradename: OptiMOS    
• Series: OptiMOS-T2    
• Packaging: Reel    
• Height: 4.4 mm    
• Length:10 mm    
• Product Type:  MOSFET   
• Rise Time: 5 ns    

Package:

1x 4N03L01 IPB180N03S4L-01 TO-263-7 30V 180A SMD Triode