Specifications:
- Transistor Type: PNP
- Current - Collector (IC) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
Package:
Description:
The 2N4403 Transistor is a PNP transistor designed for low to medium power amplification and switching applications. It can handle up to 600mA of collector current, with a maximum collector-emitter breakdown voltage of 40V. The transistor features a transition frequency of 200MHz, making it suitable for high-frequency applications. With a minimum DC current gain of 100 at 150mA and 2V, it provides reliable performance in both general-purpose and specialized applications. Its TO-92 through-hole package makes it easy to integrate into your circuit.
FAQ:
- What is the maximum collector current for the 2N4403 transistor?
- The maximum collector current is 600mA.
- What is the maximum collector-emitter breakdown voltage?
- The maximum collector-emitter breakdown voltage is 40V.
- What is the transition frequency of the 2N4403 transistor?
- The transition frequency is 200MHz.
- What is the DC current gain of this transistor?
- The DC current gain is 100 at 150mA and 2V.
- What is the operating temperature range for the 2N4403 transistor?
- The operating temperature range is -55°C to 150°C.
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