• Ultra-low capacitance of 0.75pF for high-frequency applications
• Compact 1206 SMD package for space-efficient PCB design
• Multilayer ceramic construction for enhanced stability
• Low tolerance for precise capacitance in RF circuits

• N-Channel Power MOSFET
• High continuous drain current capacity (9.2A)
• Low drain to source resistance (0.27 Ohms)
• Fast rise time and fall time (30nS and 20nS respectively)

• Compact Size: Ideal for space-constrained installations
• Lightweight Design: Easy to handle and install
• Sealed Case: Resists baking, ensuring high accuracy
• Long Service Life: Rated for 10,000+ cycles at the rated load

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

• Core Architecture: AVR 8-bit
• Max Frequency: 20 MHz
• Data Bus Width: 8 bits
• Memory Size: 4 kB FLASH

• Standard Type with Excellent Ratings
• Long Life
• Easy Mounting
• RoHS Compliant

• Pre-Insulated Design: Provides safe and secure electrical connections.
• High Current Capacity: Capable of handling up to 48A of current.
• Durable Materials: Made of PVC plastic and metal for long-lasting performance.
• Ring Tongue Design: Ensures a secure fit for reliable connections.

• High-speed operation with typical propagation delay of 11 ns at 5V.
• Low power consumption with a maximum ICC of 1.0 µA at 25°C.
• High noise immunity with a typical VH of 1.1 V at 4.5 V.
• Wide operating voltage range from 2.0V to 6.0V.

• 1K Memory, 128 x 8 bits or 64 x 16 bits
• Three-Wire Serial Interface
• Self-Timed ERASE and WRITE Cycles

• Capacity range: 0-70pf
• Rated voltage: 100V
• Maximum voltage: 220V
• Insulation resistance: 10000MΩ

• High power rating of 30W
• Made from ceramic and cement materials
• 5% tolerance for precise resistance
• White color for easy identification

• Power Rating: 1/4W for efficient power handling
• Tolerance: ±1% for precision
• Technology: Thick Film, ensuring reliable performance
• Temperature Coefficient: 100ppm/°C, providing

Specifications:

• Resistance: 2.7R ohms
• Power Rating: 0.5 Watt (1/2W)
• Type: Metal Film Resistor
• Tolerance: ±1% (or as specified)
• Temperature Coefficient: ±50ppm/°C (typical for metal film resistors)
• Lead Diameter: Typically 0.6mm
• Body Size: Length ~6.3mm, Diameter ~2.3mm
• Operating Temperature Range: -55°C to +155°C
• Packaging: Usually in tape or bulk

Package:

5x 2.7R 0.5 Watt Metal Film Resistor 2.7R 1/2W MFR Resistor

• 16K Memory, 2k x 8 bits
• Two-Wire Serial Interface (I2C)
• Write Protect Pin for Hardware Data Protection

• Type: Integrated Circuit (IC)
• Function: Microcontroller-based IC
• Pin Count: Typically 28 pins
• Packaging: DIP (Dual In-line Package)

• Quad 2-input XNOR gates for digital logic applications
• DIP-14 package, easy to integrate into PCBs
• Wide operating voltage range (2V - 6V)
• Low power consumption, max 2µA quiescent current