The 20N60 IGBT is a high-performance insulated-gate bipolar transistor (IGBT) designed for efficient power switching applications. With a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 20A, it ensures reliable performance. Available in PG-TO-220-3-1 and PG-TO-247-3 packages.

Key Features:

• Type: SGP20N60 and SGW20N60
• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 20A
• Saturation Voltage (VCE(sat)): 2.4V
• Maximum Junction Temperature (Tj): 150°C
• Marking: G20N60
• Package: PG-TO-220-3-1 and PG-TO-247-3

The 78L09 Positive Voltage Regulator in a TO-92 package is designed for a wide range of applications. This regulator provides a fixed output voltage of +9V and can deliver up to 100mA of current. It features internal thermal overload protection, short-circuit current limiting, and output transistor safe-area compensation, ensuring reliable performance without external components.

Key Features:

• Output Voltage Range: +9V
• Output current up to 100mA
• No external components required
• Internal thermal overload protection
• Internal short-circuit current limiting
• Output transistor safe-area compensation
• Output voltage offered in 4% tolerance

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Original Japanese Quality: 100% authentic TOSHIBA A1941 transistor.
• High Power Output: Perfect for high-power audio amplification and switching.
• Low Distortion: Ensures clear and accurate audio signal transmission.

• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

• Advanced HEXFET® Technology for high efficiency.
• Ultra-low on-resistance (Rds On) for minimal power loss.
• Fast switching speed, ideal for high-frequency applications.
• Dynamic dv/dt rating for improved performance.

2SC3858 High-Power NPN Transistors are designed for high-performance electronic applications. These transistors offer:

• Type: NPN
• Collector-Emitter Voltage: 200 V
• Collector-Base Voltage: 200 V
• Emitter-Base Voltage: 6 V
• Collector Current: 17 A
• Collector Dissipation: 200 W
• DC Current Gain (hfe): 50 to 180
• Transition Frequency: 20 MHz
• Operating Temperature Range: -55 to +150 °C
• Package: MT-200

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.

• High Voltage Rating: Up to 300V
• Collector Current: Supports up to 1A
• Low Saturation Voltage: Improves efficiency
• Compact TO-92L Package: Ideal for space-constrained applications

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

The 2SC4793 NPN transistor is designed for high voltage and high frequency applications. With a maximum collector power dissipation of 20W, this silicon transistor provides excellent performance in various electronic circuits. Key features include:

• Type Designator: 2SC4793
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector-Base Voltage: 230V
• Maximum Collector-Emitter Voltage: 230V
• Maximum Emitter-Base Voltage: 5V
• Maximum Collector Current: 1A
• Maximum Temperature: 150°C
• Transition Frequency: 100MHz
• Collector Capacitance: 20pF
• Minimum Forward Current Transfer Ratio: 100

The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:

• High thermal conductivity for efficient heat dissipation.
• Electrical insulation to protect sensitive electronic components.
• Flexible and easy to apply.
• Available in various thicknesses and sizes.

MJE15033G - Bipolar (BJT) Single Transistor

The MJE15033G is a high-performance PNP Bipolar Power Transistor designed for a variety of applications, including automotive. It offers a high collector emitter voltage and power dissipation, making it an excellent choice for demanding tasks.

• Transistor Polarity: PNP
• Collector Emitter Voltage (V_ceo): -250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: -8A
• DC Current Gain (h_FE): 30
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V