Key Features:

• Type: Thyristors - SCRs
• Off-State Voltage: 500V
• Gate Trigger Voltage (Max): 1.5V
• Gate Trigger Current (Max): 15mA
• On-State Voltage (Max): 1.75V
• On-State Current (AV) (Max): 7.5A
• On-State Current (RMS) (Max): 12A
• Hold Current (Max): 20mA
• Off-State Current (Max): 500µA
• Non-Repetitive Surge Current: 120A, 132A
• Operating Temperature: -40°C to 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Base Part Number: BT151

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs

The 2N3866 High-Frequency NPN Transistor is a versatile component perfect for various high-frequency applications. It offers reliable performance with a wide operating range and significant current handling capabilities.

• Type: NPN
• Collector-Emitter Voltage: 30 V
• Collector-Base Voltage: 55 V
• Emitter-Base Voltage: 4 V
• Collector Current: 0.4 A
• Collector Dissipation: 5 W
• DC Current Gain (hfe): 10 to 200
• Transition Frequency: 500 MHz
• Operating Temperature Range: -65 to +200 °C

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

• N-Channel power MOSFET for high-efficiency switching applications
• Maximum drain-to-source voltage (VDS): 200V
• Continuous drain current (ID): 9A
• High pulsed drain current: 36A

Introducing the BU807 NPN Transistor, a high-efficiency silicon transistor ideal for various electronic applications. It features a maximum collector-emitter voltage of 150V and a high current capacity of 8A, making it suitable for demanding tasks. Key features include:

• Transistor Polarity: NPN
• Collector-Emitter Voltage (Vceo): 150V
• Minimum Base Current (Ib): 2A
• Maximum Collector Current (Ic): 8A
• Total Dissipation at Tc≤25°C: 60W
• Package / Case: TO220

• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

2SA1216 Audio Amp Transistor

Experience superior audio amplification with the 2SA1216 Audio Amp Transistor. Designed for high power performance and reliability, this transistor is perfect for enhancing your audio projects.

• Model: 2SA1216
• Parameters: 200W/180V/17A
• Package: 1x 2SA1216 Audio Amp Transistor

• Programmable Zener diode
• Output voltage range: 2.5V to 36V
• Output current range: 1mA to 100mA (sink current)
• Output voltage tolerance: ±4%

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

• NPN transistor for medium-frequency applications
• High current gain
• Suitable for amplification in audio and RF circuits
• Low noise operation

The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:

• High thermal conductivity for efficient heat dissipation.
• Electrical insulation to protect sensitive electronic components.
• Flexible and easy to apply.
• Available in various thicknesses and sizes.

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 25V
• Collector Current (Ic): 0.05A (50mA)
• DC Current Gain (hFE): 65-700 @ 1mA

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• N-Channel MOSFET for high-power switching applications
• Capable of handling up to 200 V and 31A at 25°C
• Low Rds On for better efficiency: 75mOhm @ 15.5A, 10V
• High power dissipation capacity of 180W (Tc)