Bipolar Junction Transistors (BJT)

Specifications:

• Type: NPN Silicon High-Frequency Transistor
• Collector-Emitter Voltage (Vce): 15V
• Collector-Base Voltage (Vcb): 15V
• Emitter-Base Voltage (Veb): 2V
• Collector Current (Ic): 25mA
• Power Dissipation (Ptot): 300mW
• Transition Frequency (ft): 5GHz
• Package Type: TO-50
• Operating Temperature Range: -65°C to +150°C

Package:

1x BFR91A Transistor

• High power dissipation of 186W for efficient operation.
• Wide operating temperature range from -55°C to +150°C.
• Continuous collector current up to 30A for high-performance applications.
• Compact dimensions for space-saving designs.

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

• PNP Transistor: Suitable for low to medium power amplification and switching circuits.
• High Current Handling: Supports up to 600mA of collector current.
• Wide Voltage Range: Maximum collector-emitter breakdown of 40V.
• DC Current Gain: Provides a minimum current gain of 100 at 150mA and 2V.

• High voltage rating of 1500V for superior performance in demanding applications
• Low saturation voltage of 5V (Max.) ensuring efficient operation
• High-speed switching capabilities with a typical rise time of 0.3 µs
• Built-in damper type for enhanced protection

• NPN transistor with plastic casing for durability.
• Continuous collector current (IC) of 1.5A for high-power applications.
• High collector-emitter voltage (VCE) of 80V.
• Base current (Ib) of 0.5A for efficient switching.

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA

• Transistor Type: NPN
• Max Collector Current (IC): 5A
• Max Collector-Emitter Voltage (VCE): 20V
• Max Collector-Base Voltage (VCB): 40V

• Transistor Type: NPN
• Max Collector Current (Ic): 30mA
• Voltage - Collector-Emitter Breakdown (Max): 20V
• DC Current Gain (hFE): 67 @ 1mA, 10V

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Type: NPN Medium Power Transistor
• Application: Ideal for voltage regulation, relay driver, generic switch, audio power amplifier, and DC-DC converter applications
• Peak Collector Current: 6A
• Collector to Base Voltage: 60V

• High Power NPN Transistor – Suitable for low-frequency applications
• Single Transistor Configuration – Easy to integrate into circuits
• Compact SOT-32-3 Package – Space-efficient and reliable
• Surface-Mount Technology (SMT/SMD) – Ensures secure placement on PCBs

• High voltage NPN transistor with 160V rating
• Maximum collector current of 1A
• Power dissipation up to 900mW
• Compact TO-92 package for versatile use

• High Voltage Rating: Up to 300V
• Collector Current: Supports up to 1A
• Low Saturation Voltage: Improves efficiency
• Compact TO-92L Package: Ideal for space-constrained applications

• Type: PNP Bipolar Small Signal Transistor
• Collector-Base Voltage (Vcb): 40V
• Collector-Emitter Voltage (Vce): 40V
• Emitter-Base Voltage (Veb): 5V

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 25V
• Collector Current (Ic): 0.05A (50mA)
• DC Current Gain (hFE): 65-700 @ 1mA

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcb): 50V
• Emitter-Base Voltage (Vbe): 6V

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 80V
• Collector Current (Ic): 15A
• DC Current Gain (hFE): 80 - 320

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs

• PNP polarity transistor for power applications
• High DC current gain of 25 at 1.5A and 4V
• Maximum operating frequency of 3 MHz
• Maximum collector-emitter voltage of 100V

• Package Type: TO-220
• Transistor Type: NPN
• Max Collector Current (IC): 6A (6000mA)
• Max Collector-Emitter Voltage (VCE): 100V

• Type: PNP
• Collector-Emitter Voltage: -80V
• Collector-Base Voltage: -80V
• Collector Current: -5A

• PNP transistor type
• Maximum collector current: -800mA
• Maximum collector-emitter voltage: -45V
• Maximum collector-base voltage: -50V

• NPN transistor for medium-frequency applications
• High current gain
• Suitable for amplification in audio and RF circuits
• Low noise operation

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

Specifications:

• Type: PNP
• Collector-Emitter Voltage: -60V
• Collector-Base Voltage: -60V
• Emitter-Base Voltage: -5V
• Collector Current: -3A
• Collector Dissipation: 40W
• DC Current Gain (hfe): 10 to 50
• Transition Frequency: 3 MHz
• Operating Temperature: -65 to +150°C
• Storage Temperature: -65 to +150°C
• Package: TO-220

Package:

• 1 x TIP32C Bipolar Transistor

• Bi-Polar PNP Transistor
• DC Current Gain (hFE): Maximum 300
• Continuous Collector Current (IC): 100mA