Offer


BC557 Transistor

Model: 3149

৳5.00
No tax
  • Bi-Polar PNP Transistor
  • DC Current Gain (hFE): Maximum 300
  • Continuous Collector Current (IC): 100mA
Quantity
Add to wishlist
In Stock

  Safe Shopping

Data Protection.

  Fast Delivery

Delivery all over Bangladesh.

Guarantee safe & secure checkout

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Emitter Voltage (VCE): 45V
  • Maximum Collector-Base Voltage (VCB): 50V
  • Maximum Emitter-Base Voltage (VBE): 6V
  • Collector Current (IC): 100mA
  • DC Current Gain (hFE): 110 to 300
  • Power Dissipation: 500mW
  • Package Type: TO-92
  • Transition Frequency: 150MHz

Package:

1 x BC557 Transistor (TO-92 Package)


Description:
The BC557 is a general-purpose PNP bi-polar junction transistor designed for low-power amplification and switching applications. It has a high DC current gain (hFE) of up to 300, making it perfect for use in signal processing circuits. With a maximum collector current of 100mA and a maximum voltage rating of 45V, the BC557 is suitable for various low-voltage electronic projects. Its compact TO-92 package ensures ease of use in breadboards and PCBs.


FAQ:

Q1: What type of transistor is the BC557?
A1: The BC557 is a PNP bi-polar junction transistor.

Q2: What is the maximum collector current (IC) of the BC557?
A2: The maximum collector current is 100mA.

Q3: What package does the BC557 come in?
A3: It comes in a TO-92 package.

Q4: What is the DC current gain (hFE) range of the BC557?
A4: The DC current gain ranges from 110 to 300.

Q5: Can the BC557 be used for switching applications?
A5: Yes, it is suitable for low-power amplification and switching applications.



BC557 Transistor ElectronicsBD Bangladesh (BD)

In Bangladesh, you can get the best Quality and original BC557 Transistor from ElectronicsBD. We have a large collection of the latest BC557 Transistor to purchase. Order online or visit our shop ElectronicsBD to get yours at the lowest price.

What is the latest and best price of BC557 Transistor in Bangladesh (BD) ?

The latest and special price of BC557 Transistor in Bangladesh is BDT 5 Taka. Buy best quality BC557 Transistor from ElectronicsBD at a special price in Bangladesh (BD). You can buy BC557 Transistor at best price from ElectronicsBD or visit ElectronicsBD Store. বাংলাদেশে আকর্ষণীয় মূল্যে কিনুন BC557 Transistor শুধুমাত্র ইলেকট্রনিক্স বিডি ElectronicsBD থেকে। ElectronicsBD বাংলাদেশের সকল প্রধান স্থান যেমন বরিশাল, চট্টগ্রাম, ঢাকা, খুলনা, রাজশাহী, রংপুর, ময়মনসিংহ, সিলেটে সহ সকল স্থানে পণ্য ডেলিভারি করে ।
3149

16 other products in the same category:

Availability: 10000 In Stock

The MD1803DFX High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

  • Collector-Emitter Voltage (Vce): 80V
  • Collector-Base Voltage (Vcb): 80V
  • Emitter-Base Voltage (Veb): 5V
  • Collector Current (Ic): 3A
  • Power Dissipation (Ptot): 1.5W
  • DC Current Gain (hFE): 100-300
  • Transition Frequency (ft): 150MHz
  • Package: TO-92
Availability: 10000 In Stock
  • High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
  • Low Rds On for improved power efficiency.
  • 160W Maximum Power Dissipation, ensuring stable performance under load.
  • Gate-Source Voltage up to 20V for flexible control.
Availability: 10000 In Stock

The 2SC5242 Bipolar Transistor is a high-performance NPN transistor designed for a wide range of applications. With a collector-emitter voltage of 250V, collector current of 17A, and a dissipation of 130W, it offers robust performance and reliability. This transistor is housed in a TO-3P package, making it suitable for various electronic projects.

Key Features:

  • Type: NPN
  • Collector-Emitter Voltage: 250V
  • Collector-Base Voltage: 250V
  • Emitter-Base Voltage: 5V
  • Collector Current: 17A
  • Collector Dissipation: 130W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency: 30 MHz
  • Operating and Storage Temperature Range: -55 to +150°C
  • Package: TO-3P
Availability: 10000 In Stock

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

  • Type: PNP
  • Collector-Emitter Voltage: -50V
  • Collector-Base Voltage: -50V
  • Emitter-Base Voltage: -5V
  • Collector Current: -0.15A
  • Collector Dissipation: 0.4W
  • DC Current Gain (hFE): 70 to 400
  • Transition Frequency: 80MHz
  • Operating and Storage Junction Temperature Range: -55°C to +125°C
  • Package: TO-92
Availability: 10000 In Stock
  • NPN Transistor: Ideal for low to medium power amplification.
  • High Current Handling: Capable of handling up to 500mA of collector current.
  • Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
  • High Gain: Offers a current gain range of 20 – 300.
Availability: 10000 In Stock

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

  • Part NO.: FQA24N60
  • Package: TO-3P
  • FET Type: MOSFET N-Channel, Metal Oxide
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23.5A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
  • Power - Max: 310W
  • Mounting Type: Through Hole
  • Supplier: SICSTOCK
Availability: 10000 In Stock
  • High Power Handling: Suitable for power-intensive applications
  • Low-Frequency Performance: Optimized for low-frequency circuits
  • Durable Silicon Material: Ensures stability and longevity
  • Power Diode Capability: Functions efficiently as a power tube
Availability: 10000 In Stock
  • High current capacity, capable of continuous drain current of 130-210A
  • Supports a drain-to-source voltage of 60V
  • Avalanche energy rating of 800 mJ for reliable performance under high-stress conditions
  • Junction and storage temperature range from -55 to 175°C

16TTS12 Thyristors

৳267.00
Availability: 10000 In Stock

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

  • Average Current (IT(AV)): 10 A
  • Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
  • On-State Voltage (VTM): 1.4 V
  • Gate Trigger Current (IGT): 60 mA
  • Operating Junction Temperature (TJ): -40°C to 125°C
  • Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

Availability: 10000 In Stock

The Sil Pad Transistor Pad is made from high-quality silicone rubber, providing excellent thermal conductivity and electrical insulation. Key features include:

  • High thermal conductivity for efficient heat dissipation.
  • Electrical insulation to protect sensitive electronic components.
  • Flexible and easy to apply.
  • Available in various thicknesses and sizes.

FGA15N120 IGBT

৳229.00
Availability: 10000 In Stock

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

  • NPT Trench Technology, Positive Temperature Coefficient
  • Low Saturation Voltage: VCE(sat), typ = 1.9V
  • IC = 15A and TC = 25°C
  • Low Switching Loss: Eoff, typ = 0.6mJ
  • Extremely Enhanced Avalanche Capability
  • TO-3P Package
Availability: 10000 In Stock
  • Low voltage, high current PNP transistor.
  • High current gain (hFE: 85 to 300).
  • Suitable for Class B push-pull transistor configurations.
  • Compact TO-92 package for easy integration.
Availability: 10000 In Stock

The 2SC5200 NPN Epitaxial Silicon Transistor offers reliable performance for your high-power amplifier needs. This robust transistor is designed to handle high currents and voltages with ease, ensuring consistent performance in various applications.

Key Features:

  • Collector-Base Voltage (VCBO): 230V
  • Collector-Emitter Voltage (VCEO): 230V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 15A
  • Base Current (IB): 1.5A
  • Collector Power Dissipation (PC): 150W (Tc = 25°C)
  • Junction Temperature (Tj): 150°C
  • Storage Temperature Range (Tstg): -55 to 150°C
Availability: 10000 In Stock

The IRF740 N-Channel MOSFET Transistor is a powerful component for high-voltage applications. This versatile transistor includes:

  • High voltage capacity of 400 volts for robust performance in demanding circuits.
  • N-Channel enhancement mode for efficient switching operations.
  • Low on-resistance and high-speed switching capabilities.
  • Ideal for power management, motor control, and other high-power applications.