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Specifications:
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current : 25 mA (Max.) @ VDS = 900V
- Low RDS(ON) : 2.300 W (Typ.)
Package:
1x SSP5N90A N-Channel power mosfet