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Specifications:
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 35A
- Pulsed Drain Current (ID-peak) is 50A
- Drain to Source Breakdown Voltage: 60V
- Drain Source Resistance (RDS) is 0.018 Ohms
- Gate threshold voltage (VGS-th) is 20V (max)
- Rise time and fall time is 50nS and 15nS
- Input Capacitance 1300pF
- Output Capacitance 300pF
- Available in To-220 package
Package:
1x P55NF06 N-Channel Power MOSFET