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Specifications:
- Transistor type: N-channel
- Maximum applied voltage from drain-to-source (VDS): 200 V
- Maximum Drain current (continuous) ID: 9 A
- Maximum Drain Current (Pulse): 36 A
- Maximum Power dissipation: 74 W
- On-state resistance between drain and source: 0.40 Ω
- gate-to-source voltage: ±20 V
- Gate charge QD: 43 nC
- Dynamic dv/dt ruggedness: 5.8 V/ns
- Operating junction and storage temperature range: -55 to 150 ˚C
- Package: TO-220
Package:
1x IRF630 N-Channel Power MOSFET