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Specifications:
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 9.2A
- Drain to Source Breakdown Voltage: 100V
- Drain Source Resistance (RDS) is 0.27 Ohms
- Gate threshold voltage (VGS-th) is 4V (max)
- Rise time and fall time is 30nS and 20nS
- It is commonly used with Arduino, due to its low threshold voltage.
- Available in To-220 package
Package:
1x IRF520 N-Channel Power MOSFET