What is FQP34N20 N-Channel Mosfet ?

The FQP34N20 is an N-channel MOSFET transistor designed for high-power switching applications in electronic circuits.
The FQP34N20 MOSFET is commonly used in various electronic applications such as power supplies, motor control, voltage regulation, and switching circuits where high voltage and current handling capabilities are required. Its robust construction, low on-state resistance, and high-speed switching characteristics make it suitable for demanding environments and applications.

• Transistor Type: It is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate terminal relative to the source terminal.

• Voltage and Current Ratings: The FQP34N20 has a Drain to Source Voltage (Vdss) rating of 200V, meaning it can withstand a maximum voltage of 200 volts when fully turned off. The Continuous Drain Current (Id) rating at 25°C is 31A, indicating the maximum current it can carry continuously under specified conditions.

• Power Dissipation: The maximum power dissipation of this MOSFET is 180W when operating at a specified temperature (Tc).

• Mounting Type: It is designed for through-hole mounting, which means it can be soldered onto a printed circuit board (PCB) through holes in the board.

Key Specifications:

• Transistor Type: N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id) @ 25°C: 31A (Thermal Characteristics)
• Maximum Power Dissipation: 180W (Thermal Characteristics)
• Maximum Gate to Source Voltage (Vgs): ±30V
• Maximum Gate Threshold Voltage (Vgs(th)): 5V @ 250µA
• On-State Resistance (Rds On) @ Id, Vgs: 75mOhm @ 15.5A, 10V
• Gate Charge (Qg) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) @ Vds: 3100pF @ 25V
• Operating Temperature Range: -55°C to 150°C

Features:

• High Voltage and Current Ratings: With a Vdss of 200V and a continuous drain current rating of 31A, this MOSFET is capable of handling demanding power requirements in various electronic circuits.
• Low On-State Resistance: The low Rds On value of 75mOhm ensures minimal power loss and efficient operation, even under high load conditions.
• Enhanced Gate Control: The gate charge (Qg) of 78nC at 10V gate-source voltage enables precise and responsive control over switching operations, contributing to improved performance and reliability.
• Wide Operating Temperature Range: Designed to operate reliably in extreme temperature conditions ranging from -55°C to 150°C, making it suitable for a diverse range of environments and applications.
• Through-Hole Mounting: Featuring a through-hole mounting type, the FQP34N20 offers easy and secure installation on PCBs, ensuring stability and durability in electronic assemblies.

Application Areas:

• Power Supply Systems: Ideal for use in power supply circuits, inverters, converters, and motor control applications where high voltage and current handling capabilities are required.
• Switching Circuits: Suitable for switching applications in industrial automation, automotive electronics, telecommunications, and consumer electronics.
• Amplification and Signal Processing: Can be employed in audio amplifiers, signal processing circuits, and voltage regulation circuits to enhance performance and efficiency.

Overall, the FQP34N20 N-Channel MOSFET stands out as a reliable and high-performance component, offering designers and engineers a versatile solution for various power management and switching applications. Its advanced features, robust design, and wide temperature range make it an excellent choice for demanding electronic systems.

How FQP34N20 N-Channel Mosfet works ?

1. Construction: The FQP34N20 consists of three main terminals: the Source (S), the Drain (D), and the Gate (G). It is made of a semiconductor material, typically silicon, with an insulated gate region separating the gate terminal from the semiconductor channel.

2. Gate Control: When a voltage is applied to the gate terminal relative to the source terminal, it creates an electric field in the insulated gate region. This electric field modulates the conductivity of the semiconductor channel between the source and drain terminals.

3. Channel Formation: In its off state (when no voltage is applied to the gate), the MOSFET has a high impedance, and the semiconductor channel between the source and drain terminals is effectively non-conductive. This state is often referred to as being "off" or "cut-off."

4. Turn-On: When a positive voltage is applied to the gate terminal relative to the source terminal, it creates an electric field that attracts negatively charged electrons within the semiconductor material, forming an electron-rich channel between the source and drain terminals. This allows current to flow from the source to the drain, and the MOSFET enters its "on" state.

5. Controlled Conductivity: The conductivity of the channel (and hence the current flow between the source and drain) is controlled by the voltage applied to the gate terminal. Increasing the gate-source voltage (Vgs) increases the conductivity of the channel, allowing more current to flow through the MOSFET.

6. Turn-Off: When the voltage applied to the gate terminal is reduced or removed, the electric field in the gate region diminishes, causing the semiconductor channel to revert to its high-impedance state. This turns off the MOSFET, effectively blocking current flow between the source and drain.

Frequently asked questions (FAQ)

1. What is the maximum voltage the FQP34N20 can handle?

   • The FQP34N20 is rated for a maximum Drain to Source Voltage (Vdss) of 200 volts. This means it can safely withstand voltages up to 200V when fully turned off.

2. What is the maximum continuous current the FQP34N20 can carry?

   • The FQP34N20 is capable of carrying a continuous drain current (Id) of 31A at 25°C. This rating indicates the maximum current the MOSFET can handle continuously under specified conditions.

3. How do I determine the power dissipation of the FQP34N20 in my circuit?

   • The maximum power dissipation of the FQP34N20 is specified as 180W when operating at a certain temperature (Tc). To determine the power dissipation in your circuit, calculate the product of the drain current and the drain-to-source voltage drop, taking into account any temperature effects.

4. What is the significance of the gate threshold voltage (Vgs(th)) for the FQP34N20?

   • The gate threshold voltage (Vgs(th)) of the FQP34N20 is 5V at a specified drain current (Id). It represents the minimum gate-source voltage required to turn the MOSFET on and initiate channel conduction. Below this threshold voltage, the MOSFET remains in its off state.

5. Can the FQP34N20 be used in high-temperature environments?

   • Yes, the FQP34N20 is designed to operate reliably in a wide temperature range from -55°C to 150°C (TJ). This wide operating temperature range makes it suitable for use in various electronic applications, including those subject to elevated temperatures.

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