• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

MJE15032G - Bipolar (BJT) Single Transistor

The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.

• Transistor Polarity: NPN
• Collector Emitter Voltage (V_ceo): 250V
• Transition Frequency (f_t): 30MHz
• Power Dissipation (P_d): 50W
• DC Collector Current: 8A
• DC Current Gain (h_FE): 70
• Transistor Case Style: TO-220
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Product Range: MJxxxx Series
• Automotive Qualification Standard

The 2N3055 NPN Power Transistor is a robust component designed for high-power applications. With a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V, it ensures reliable performance. This transistor is ideal for chassis mounting and comes in a TO-3 package.

Key Features:

• Part NO.: 2N3055
• Package: TO-3
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-3

Supplier: SICSTOCK

Specifications:

• Type: PNP
• Collector-Emitter Voltage: -60V
• Collector-Base Voltage: -60V
• Emitter-Base Voltage: -5V
• Collector Current: -3A
• Collector Dissipation: 40W
• DC Current Gain (hfe): 10 to 50
• Transition Frequency: 3 MHz
• Operating Temperature: -65 to +150°C
• Storage Temperature: -65 to +150°C
• Package: TO-220

Package:

• 1 x TIP32C Bipolar Transistor

• Miniature Size for easy installation
• Low Holding Current Distribution for flexible design
• High Peak Reverse Blocking Voltage of 500V
• Peak On-State Current of 2A

• High Current Handling: Supports a continuous drain current of 49A at 25°C.
• High Voltage Tolerance: Maximum Drain-Source Voltage (VDS) of 55V.
• Fast Switching Speed:
  • Rise time: 60ns
  • Fall time: 45ns

The 2SA1943 PNP Epitaxial Silicon Transistor delivers outstanding performance for high-power applications. This high-reliability transistor is capable of handling high currents and voltages, making it ideal for demanding electronic circuits.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Operating Temperature: -55°C to +150°C

Pack includes: 1x 2SA1943 PNP Epitaxial Silicon Transistor

The 2N3866 High-Frequency NPN Transistor is a versatile component perfect for various high-frequency applications. It offers reliable performance with a wide operating range and significant current handling capabilities.

• Type: NPN
• Collector-Emitter Voltage: 30 V
• Collector-Base Voltage: 55 V
• Emitter-Base Voltage: 4 V
• Collector Current: 0.4 A
• Collector Dissipation: 5 W
• DC Current Gain (hfe): 10 to 200
• Transition Frequency: 500 MHz
• Operating Temperature Range: -65 to +200 °C

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

The C1815 NPN General Purpose Transistor is a versatile component designed for various electronic applications. Key features include:

• Collector-Emitter Voltage (V_ceo): 50V
• Collector-Base Voltage (V_cbo): 60V
• Collector Current (I_c): 0.15A
• h_fe: 70-700 @ 2mA
• Power Dissipation (P_tot): 400mW
• Current-Gain-Bandwidth (f_total): 80MHz
• Type: NPN

• High Power Dissipation: Max 300 W
• High Drain-Source Voltage: 500 V
• Maximum Drain Current: 21 A
• Low On-State Resistance: 0.25 Ohm

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

A1015 Bipolar Transistor – PNP Type

The A1015 is a reliable PNP bipolar transistor, ideal for audio frequency amplifier applications and switching purposes. Key features include:

• Type: PNP
• Collector-Emitter Voltage: -50V
• Collector-Base Voltage: -50V
• Emitter-Base Voltage: -5V
• Collector Current: -0.15A
• Collector Dissipation: 0.4W
• DC Current Gain (hFE): 70 to 400
• Transition Frequency: 80MHz
• Operating and Storage Junction Temperature Range: -55°C to +125°C
• Package: TO-92

The BT134 600V 4A TRIAC is a high-performance bi-directional thyristor designed for efficient power control in various applications. With a reverse peak voltage of 600V and a rating forward current of 4A, it ensures reliable performance. This TRIAC is ideal for through hole mounting.

Key Features:

• Reverse Peak Voltage: 600V
• Rating Forward Current: 4A
• Static Surge Current: 40A
• Terminal Number: 3
• Terminal Pitch: 2mm (0.08")
• Terminal Size: 16 x 1mm (0.63" x 0.04")
• Total Length: 30mm (1.2")
• Body Dimensions: 11 x 7.5 x 2.5mm (0.43" x 0.3" x 0.1")

Package Content: 1x Triacs

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.