• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A

The IRF540 N Channel MOSFET is an ideal choice for high-power switching applications. Capable of handling over 33A and 100V, this MOSFET comes in a TO-220 package, which fits perfectly into breadboards and perfboards. With a very low Rds(on) down to 44 milliohm and a low threshold voltage of less than 2.5V, it can be directly controlled by a microcontroller running on 5V logic. Heat sinking is simple with the TO-220 package, but thanks to the low Rds(on), you can often manage without additional heat sinking for high loads.

Key Features:

• Handles over 33A and 100V
• TO-220 package for easy integration
• Very low Rds(on) down to 44 milliohm
• Low threshold voltage (Vgs) of less than 2.5V
• Directly controllable from 5V logic microcontrollers

• Compact TO92 package for easy circuit integration.
• Suitable for low-power amplification and switching applications.
• Handles up to 200mA collector current.
• High temperature resistance up to 125°C.

• Type: NPN Silicon Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Voltage (Vce): 300V
• Saturation Voltage: 500mV @ 2mA, 20mA

• Ultra-soft with slight stickiness for easy handling.
• Good thermal conductivity for effective heat management.
• Feels like plasticine but has a degree of plasticity.
• Ideal for use with CPU, GPU, VGA cards, and IC components.

Key Features:

• High-power audio amplifier IC
• Maximum output power: 32W
• Operating voltage: -25V to +25V
• Output: 28W with 4Ω speaker
• Short circuit and thermal protection
• Breadboard friendly

The BD140 PNP Power Transistor is ideal for audio amplifiers, switching loads under 1.5A, battery chargers, power supplies, motor drivers, and Darlington pairs. This versatile transistor ensures reliable performance in various electronic applications.

Key Features:

• Audio Amplifiers
• Switching Loads under 1.5A
• Battery Chargers
• Power Supplies
• Motor Driver
• Darlington Pair

The IRF840 N-Channel MOSFET is a high-performance power MOSFET designed for efficient switching applications. With a high voltage rating and robust current handling capabilities, it is ideal for various power control circuits.

Key Features:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 8.0A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

Discover the TOSHIBA TTA1943 TRANSISTOR, a PNP power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

The 2SA1943 PNP Epitaxial Silicon Transistor delivers outstanding performance for high-power applications. This high-reliability transistor is capable of handling high currents and voltages, making it ideal for demanding electronic circuits.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Operating Temperature: -55°C to +150°C

Pack includes: 1x 2SA1943 PNP Epitaxial Silicon Transistor

Specifications:

• Vr rm: 400V
• It (rms): 0.8A
• Pgm: 0.1W
• Vgrm: 5V
• Vgt: 0.8V
• Ih: 5mA
• Manufacturer: Motorola
• Model Number: MCR100-6

Package:

• 1x MCR100-6 MCR100-6G MCR100 0.8A 400V SCR Thyristor Transistor TO-92 Package

The 2N7000 MOSFET Transistor from Fairchild Semiconductor is a highly efficient component suitable for a variety of electronic applications. It features a maximum continuous drain current of 200mA and a maximum drain source voltage of 60V.

Key Features:

• Maximum Continuous Drain Current: 200mA
• Maximum Drain Source Voltage: 60V
• Maximum Drain Source Resistance: 5Ω
• Gate Threshold Voltage (VGS): Min = 0.8V, Max = 3V
• Maximum Power Dissipation: 400mW

• Drain-Source Voltage (Vds): -55V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W

MJE2955 - High Performance PNP Power Transistor

Discover the robust performance of the MJE2955 PNP Power Transistor, designed for high power applications with a collector-emitter voltage of -60V and a collector current of -10A. Featuring a DC current gain (hFE) of 20 to 70 and a power dissipation of 75W, this transistor is ideal for a variety of electronic circuits.

• Collector-Emitter Voltage (VCEO): -60V
• Collector Current (Ic): -10A
• DC Current Gain (hFE): 20 to 70
• Power Dissipation (PD): 75W

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V