MJE2955 - High Performance PNP Power Transistor

Discover the robust performance of the MJE2955 PNP Power Transistor, designed for high power applications with a collector-emitter voltage of -60V and a collector current of -10A. Featuring a DC current gain (hFE) of 20 to 70 and a power dissipation of 75W, this transistor is ideal for a variety of electronic circuits.

• Collector-Emitter Voltage (VCEO): -60V
• Collector Current (Ic): -10A
• DC Current Gain (hFE): 20 to 70
• Power Dissipation (PD): 75W

• N-Channel power MOSFET for high-efficiency switching applications
• Maximum drain-to-source voltage (VDS): 200V
• Continuous drain current (ID): 9A
• High pulsed drain current: 36A

• High-Frequency Performance: Transition frequency up to 3000 MHz.
• Compact and Durable: TO51 package for efficient space usage.
• Low Capacitance: 1.2 pF collector capacitance ensures minimal signal loss.

• High current capacity for power applications
• Designed for switching and amplification
• Low saturation voltage
• Robust construction for reliable performance

• Collector-Emitter Voltage (Vceo): 100V
• Collector-Base Voltage (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA

The MD1803DFX High Voltage NPN Power Transistor is designed for enhanced performance in high voltage applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

• Drain-Source Voltage (V_ds): -100V
• Gate-Source Voltage (V_gs): 20V
• Drain Current (I_d): -23A
• Power Dissipation (P_tot): 140W
• Type: P-Channel

The 2N3904 is an NPN general purpose transistor designed for various electronic applications. With a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V, it offers reliable performance. This transistor is ideal for through hole mounting.

Key Features:

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole

• High switching speed
• hFE grouping
• hFE improved linearity
• Collector–Emitter Sustaining Voltage: VCEO(SUS) = 100 Vdc (Min)

Discover the TOSHIBA TTC5200 TRANSISTOR, an NPN power transistor ideal for high-voltage audio applications. Operating at 230V and 15A, this TO3PL package transistor is perfect for power amplification in audio systems.

Introducing the BU806 NPN Transistor, a high-performance silicon transistor designed for a wide range of electronic applications. It boasts impressive specifications, including a maximum collector power dissipation of 60W and a maximum collector-emitter voltage of 200V. Key features include:

• Type Designator: BU806
• Material of Transistor: Si (Silicon)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 60 W
• Maximum Collector-Base Voltage (Vcb): 400 V
• Maximum Collector-Emitter Voltage (Vce): 200 V
• Maximum Emitter-Base Voltage (Veb): 5 V
• Maximum Collector Current (Ic max): 8 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Forward Current Transfer Ratio (hFE), MIN: 100
• Package: TO220

The FQA24N60 MOSFET is a high-performance N-channel, metal oxide semiconductor designed for efficient power switching applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23.5A, it ensures reliable performance in demanding environments. Available in a TO-3P package for through hole mounting.

Key Features:

• Part NO.: FQA24N60
• Package: TO-3P
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.5A
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11.8A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) @ Vds: 5500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

Specifications:

• Type: PNP
• Collector-Emitter Voltage: -60V
• Collector-Base Voltage: -60V
• Emitter-Base Voltage: -5V
• Collector Current: -3A
• Collector Dissipation: 40W
• DC Current Gain (hfe): 10 to 50
• Transition Frequency: 3 MHz
• Operating Temperature: -65 to +150°C
• Storage Temperature: -65 to +150°C
• Package: TO-220

Package:

• 1 x TIP32C Bipolar Transistor

• Bi-Polar NPN Transistor
• DC Current Gain (hFE): 900 (Maximum)
• Continuous Collector Current (IC): 200mA
• Emitter Base Voltage (VBE): 5V

MJ15024G - Bipolar (BJT) Single Transistor, Audio, NPN

The MJ15024G is a high-performance Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners, and other linear applications. With a high DC current gain and a broad safe operating area, it ensures reliable performance.

• High DC current gain
• High safe operating area
• Collector-base voltage (Vcbo = 400V)
• Emitter-base voltage (Vebo = 5V)

• PNP transistor with high current capacity
• Designed for switching and amplification in power applications
• High collector-to-emitter voltage
• Capable of handling pulse currents up to 13A