10N60C FQPF10N60C field effect transistor TO-220
4.36
25 reviews৳53.00
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Model: 0619
Stock In Stock
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Product Description
Part NO.:AOTF10N60
Package:TO-220F
Description:MOSFET N-CH 600V 10A TO220F
Supplier:SICSTOCK
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25° C:10A
Rds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) @ Vgs:40nC @ 10V
Input Capacitance (Ciss) @ Vds:1600pF @ 25V
Power - Max:50W
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Part NO.:AOTF10N60
Package:TO-220F
Description:MOSFET N-CH 600V 10A TO220F
Supplier:SICSTOCK
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25° C:10A
Rds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) @ Vgs:40nC @ 10V
Input Capacitance (Ciss) @ Vds:1600pF @ 25V
Power - Max:50W
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package:TO-220F
Description:MOSFET N-CH 600V 10A TO220F
Supplier:SICSTOCK
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25° C:10A
Rds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) @ Vgs:40nC @ 10V
Input Capacitance (Ciss) @ Vds:1600pF @ 25V
Power - Max:50W
Mounting Type:Through Hole
Supplier Device Package:TO-220F